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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4757
DESCRIPTION *High Breakdown Voltage: VCBO= 1500V (Min) *High Switching Speed *Low Saturation Voltage
APPLICATIONS *Horizontal deflection output for high resolution display. *High speed switching power supply output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current- Continuous
w w
scs .i w
1500 V 600 V 5 V 7 A 14 A 3.5 A
.cn mi e
ICP
Collector Current-Pulse
IB
B
Base Current- Continuous Collector Power Dissipation @ TC=25 Junction Temperature
PC
50
W
TJ
150
Tstg
Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC4757
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 5mA ; IB= 0
600
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 5A; IB= 1.2A
B
5.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 5A; IB= 1.2A
B
1.5
V
ICBO
Collector Cutoff Current
VCB= 1500V ; IE= 0
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V ; IC= 0
hFE-1
DC Current Gain
hFE-2
DC Current Gain
fT
Current-Gain--Bandwidth Product
COB
Output Capacitance
Switching times Resistive load
w w
w.
sem isc
IC= 1A ; VCE= 5V IC= 5A ; VCE= 5V IC= 0.1A ; VCE= 10V ICP= 5A , IB1= 1A ; IB2= -2A RL=39
.cn i
8 4 1 3 175
10
A
8
MHz
IE= 0 ; VCB= 10V;ftest= 1.0MHz
pF
tstg
Storage Time
2.5
s
tf
Fall Time
0.2
s
isc Websitewww.iscsemi.cn
2
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4757
w w
scs .i w
.cn mi e
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4757
w w
scs .i w
.cn mi e
isc Websitewww.iscsemi.cn
4


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